Power Amplifier
Power Amplifier (PA) designed for high-efficiency RF signal amplification in microwave and millimeter-wave systems. Provides stable gain, high output power and excellent linearity for radar transmitters, satellite communication, RF front-end modules, 5G infrastructure, RF test equipment and aerospace or defense electronics.
High-Power Solid-State Amplifiers (SSPAs) for Demanding Transmitter Applications
AO Microwave’s high-performance solid-state power amplifiers (SSPAs) are designed to provide high gain and linear power amplification for microwave and millimeter-wave transmitters. Utilizing advanced Gallium Nitride (GaN) and Gallium Arsenide (GaAs) MMIC technologies housed in robust, precision-machined aluminum cold-plates, our amplifiers achieve high power density and efficiency. Operating up to Ka-band, our power amplifiers deliver a saturated output power (Psat) of up to 100W+, a high third-order intercept point (OIP3) to minimize intermodulation distortion, and stable gain flatness across wide operating bands.
By incorporating integrated bias sequencing, temperature compensation, and reflection mismatch protection circuits, our power amplifiers ensure stable operation in severe environments. They are critical for satellite uplink transmitters (BUCs), tactical radar transmitters, and broadband electromagnetic compatibility (EMC) testing.
| Part No | Frequency/GHz | VSWR (Max) | Gain/dB (Min) | Gain Flatness/dB (Max) | Output Power/dBm (Min) | Iutput Power/dBm (Max) | Power Supply | Control Connector | Control Way |
|---|---|---|---|---|---|---|---|---|---|
| AO0.01M100M-CPA-SKNK55 | 0.01-100MHz | 2 | 55 | ±3.0 | 250 | 0 | +48V/20A | 7W2 | TTL |
| AO0.03G0.7G-CPA-SKK55 | 0.03-0.7 | 1.5 | 55 | ±1.5 | 50 | 0 | +28V/10A | J30J-15ZKP | TTL |
| AO0.5G18G-CPA-SKK15 | 0.5-18 | 2.5 | 15 | ±1.0 | 25 | 10 | +12V/400mA | J30J-15ZKP | TTL |
| AO0.7G6G-CPA-SKK37 | 0.7-6 | 2 | 37 | ±3.0 | 37 | 0 | +28V/2.5A | J30J-9ZKP | TTL |
| AO1G8G-CPA-SKK43 | 1-8 | 2 | 43 | ±2.0 | 43 | 10 | +28V/3A | DB-9 Female | TTL |
| AO1.3G2.7G-CPA-SKK43 | 1.3-2.7 | 1.5 | 43 | ±1.5 | 43 | 0 | +28V/5A | J30J-15ZKP | TTL |
| AO2G6G-CPA-SKK50 | 2-6 | 2 | 50 | ±2.0 | 33 | 18 | +5V/140mA | J30J-9ZKP | TTL |
| AO2G18G-CPA-SKK40 | 2-18 | 2 | 40 | ±1.5dB@1GHz | 40 | 10 | +28V/5A | J30J-9ZKP | TTL |
| AO2G18G-CPA-SKK43 | 2-18 | 2 | 43 | ±1.0dB@1GHz | 43 | 10 | +32V/5A | J30J-9ZKP | TTL |
| AO4G10G-CPA-SKK43 | 4-10 | 2 | 43 | ±2.0 | 43 | 10 | +28V/3A | DB-9 Female | TTL |
| AO8G12G-CPA-SKK43 | 8-12 | 2 | 43 | ±2.0 | 43 | 10 | +28V/3A | DB-9 Female | TTL |
| AO26G40G-CPA-2.92KK30 | 26-40 | 2.5 | 30 | ±2.5 | 33 | 10 | +6V/5A | Feedthru Capacitor | TTL |
Thermal Dissipation & High-Efficiency GaN Technology
Active power amplifiers convert DC current into high-frequency RF power. Because of the limited power-added efficiency (PAE) of active devices, a significant portion of this energy is dissipated as heat, creating high thermal density at the transistor junction.
To manage these high heat loads, AO Microwave utilizes advanced Gallium Nitride (GaN) MMIC technology. GaN offers a higher thermal conductivity and a higher breakdown voltage than GaAs. By mounting these MMIC chips directly onto high-conductivity copper-tungsten (CuW) carriers and precision-machined aluminum cold-plates, we ensure efficient heat transfer, preventing thermal runaway and protecting the amplifier under continuous load.
Target Applications & Operational Advantages
By providing high gain and linear power amplification, our solid-state power amplifiers enable reliable performance in active transmitter setups:
Satellite Uplink Transmitters (BUCs)
Function: Amplifies modulated carrier signals to drive the feed horn in satellite earth stations.
Advantage: Saturated output power (Psat) up to 100W+ in a compact housing allows for high uplink power with minimal distortion.
Tactical Radar Transmitters
Function: Amplifies high-power radar pulses for long-range target detection.
Advantage: High peak power capability and fast pulse response preserve pulse shape, maintaining radar detection accuracy.
Broadband EMC/Immunity Testing
Function: Generates high-power RF fields for electromagnetic compatibility testing.
Advantage: High third-order intercept point (OIP3) minimizes intermodulation distortion, ensuring clean signal generation.
Power Amplifier FAQs
Need high-power Solid-State Power Amplifiers?
Specify your frequency band, required output power (P1dB/Psat), gain, and connector interface — we'll quote in 24 hours.
